JPS5928377A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS5928377A JPS5928377A JP57140401A JP14040182A JPS5928377A JP S5928377 A JPS5928377 A JP S5928377A JP 57140401 A JP57140401 A JP 57140401A JP 14040182 A JP14040182 A JP 14040182A JP S5928377 A JPS5928377 A JP S5928377A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- base
- collector
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims abstract description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 11
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 238000000605 extraction Methods 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 150000004767 nitrides Chemical class 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 5
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000003475 lamination Methods 0.000 abstract 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 238000002955 isolation Methods 0.000 description 7
- 239000005360 phosphosilicate glass Substances 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- 241000218645 Cedrus Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052914 metal silicate Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57140401A JPS5928377A (ja) | 1982-08-09 | 1982-08-09 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57140401A JPS5928377A (ja) | 1982-08-09 | 1982-08-09 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5928377A true JPS5928377A (ja) | 1984-02-15 |
| JPH0437581B2 JPH0437581B2 (en]) | 1992-06-19 |
Family
ID=15267915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57140401A Granted JPS5928377A (ja) | 1982-08-09 | 1982-08-09 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5928377A (en]) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60207375A (ja) * | 1984-03-30 | 1985-10-18 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS612363A (ja) * | 1984-06-14 | 1986-01-08 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| US5281283A (en) * | 1987-03-26 | 1994-01-25 | Canon Kabushiki Kaisha | Group III-V compound crystal article using selective epitaxial growth |
-
1982
- 1982-08-09 JP JP57140401A patent/JPS5928377A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60207375A (ja) * | 1984-03-30 | 1985-10-18 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| JPS612363A (ja) * | 1984-06-14 | 1986-01-08 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| US5281283A (en) * | 1987-03-26 | 1994-01-25 | Canon Kabushiki Kaisha | Group III-V compound crystal article using selective epitaxial growth |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0437581B2 (en]) | 1992-06-19 |
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